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Notes on High-Energy Lasers and SiC Optical Components — Surface Processing Techniques

2025-06-24
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Notes on High-Energy Lasers and SiC Optical Components —  Surface Processing Techniques

 

Why Silicon Carbide for High-Energy Laser Optics?

 

Silicon carbide (SiC) crystals can withstand temperatures up to 1600 °C, possess high hardness, exhibit minimal deformation at high temperatures, and offer excellent transparency from visible red light to infrared wavelengths. These properties make SiC an ideal material for high-power laser modules, optical reflectors, collimating optics, and transmission windows.

 


 

Changing Landscape of High-Energy Laser Design

 

In the past, most high-power laser systems were based on ultrashort-pulse fiber lasers or large-scale reflector-based focusing lasers. However, these setups often suffered from limited beam directionality, energy density, and thermal loading.

 

Recent trends in laser system development demand:

  • Higher energy outputs
  • Long-range beam propagation
  • Tighter beam divergence and collimation
  • Lightweight and compact optical modules

 

SiC-based optics are now gaining traction as a solution to these evolving requirements—enabled by recent progress in crystal growth and ultra-precision fabrication technologies.

 


 

SiC Optics: From Theory to Application

 

With the maturation of SiC component processing—and even diamond crystal optics beginning to emerge—the future looks promising for industrial-scale deployment.

 

 

Crossroads with AR Optics and Nanostructuring Challenges

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The microfabrication challenges in SiC laser optics are remarkably similar to those in SiC-based AR waveguides:

 

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All on 4-inch / 6-inch / 8-inch SiC wafers with:

 

  • Creating anti-reflective (AR) nanostructures
  • Enhancing transmission or reflection efficiency
  • Patterning sub-wavelength grating structures
  • 100–500 nm periodicity
  • Nanometer-scale depth precision

 

Not easy tasks—especially on a material as hard and chemically inert as SiC.

 


Global Research Landscape

Institutions like Westlake University, Harvard, and others have started exploring this field.

 

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One of the biggest hurdles?
Even if the SiC wafers are affordable, how do you etch sub-micron periodic nanostructures on such a hard material without destroying it?

 


 

Throwback: Etching SiC a decade ago

Over a decade ago a 4-inch SiC wafer cost over 10,000 RMB, and etching even one was a painful process. But guess what? It worked.

 

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We achieved sub-wavelength anti-reflective (AR) structures on SiC that reduced surface reflectance by more than 30%—without using any photolithography tools.

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