Sapphire Wafer C-Plane to M 1°off 99.999% Al2O3 Dia 2"3"4"6"8" customize orientation

Sapphire Wafer C-Plane to M 1°Off, 99.999% Al₂O₃, Diameter 2"/3"/4"/6"/8", Custom Orientation

This ultra-high-purity sapphire wafer features a C-plane to M-axis 1° off-cut orientation with 99.999% (5N) Al₂O₃ purity, engineered for advanced epitaxial growth and specialized semiconductor applications. Available in standard diameters (2" to 8") with customizable orientations and thicknesses, it delivers exceptional crystallographic precision, ultra-low defect density, and superior thermal/chemical stability. The 1° off-cut toward the M-axis optimizes epitaxial film quality for GaN, AlN, and ZnO-based devices, making it ideal for high-performance LEDs, laser diodes, power electronics, and SAW/BAW filters.

Key Features of Sapphire Wafer

Precision Off-Cut Orientation:

C-plane to M-axis 1° ±0.1° off-cut, reducing step-bunching defects and improving epitaxial layer uniformity.

Custom off-cut angles (0.2°–5°) available for specialized applications.

Ultra-High Purity (5N Al₂O₃):

99.999% purity with trace impurities (Fe, Ti, Si) <5 ppm, ensuring minimal electrical/optical losses.

Customizable Dimensions & Orientations:

Diameters: 2", 3", 4", 6", 8" 

Thickness: 100 µm to 1,000 µm (±5 µm tolerance).

Alternative orientations: A-plane (1120), R-plane (1102), or mixed cuts upon request.

Superior Surface Quality:

Epi-ready polish: Ra <0.5 nm (front side) for defect-free thin-film deposition.

Double-side polishing (DSP): Ra <0.3 nm for optical applications.

Exceptional Material Properties:

Thermal stability: Melting point ~2,050°C, suitable for MOCVD/MBE processes.

Optical transparency: >85% transmission (UV to mid-IR: 250–5,000 nm).

Mechanical robustness: 9 Mohs hardness, resistant to chemical/abrasive wear.

Applications of Sapphire Wafer

Optoelectronics:

GaN-based LEDs/Laser Diodes: Blue/UV LEDs, micro-LEDs, and edge-emitting lasers.

Laser windows: High-power CO₂ and excimer laser components.

Power & RF Electronics:

HEMTs (High-Electron-Mobility Transistors): 5G/6G power amplifiers and radar systems.

SAW/BAW Filters: M-plane orientation enhances piezoelectric performance.

Industrial & Defense:

IR windows and missile domes: High transparency in extreme environments.

Sapphire sensors: Corrosion-resistant covers for harsh conditions.

Quantum & Research Technologies:

Substrates for superconducting qubits (quantum computing).

Nonlinear optics: SPDC crystals for quantum entanglement studies.

Semiconductor & MEMS:

SOI (Silicon-on-Insulator) wafers for advanced ICs.

MEMS resonators: High-frequency stability with M-plane cuts.

Specifications

Q&A

Q1: Why choose a C-plane to M 1° off-cut for GaN epitaxy?
A1: The M-axis off-cut improves adatom mobility during growth, reducing defects and enhancing uniformity in GaN films for high-power devices.

Q2: Can I request other off-cut directions (e.g., A-axis)?
A2: Yes. Custom orientations (A-plane, R-plane, or mixed cuts) are available with ±0.1° tolerance.

Q3: What’s the advantage of DSP for laser applications?

A3: DSP provides <0.3 nm roughness on both sides, reducing scatter losses for high-power laser optics.